Product Introduction And Application Of Gallium Arsenide

Gallium arsenide, with the chemical formula GaAs, is a group III-V compound semiconductor. It is composed of arsenic and gallium. It has a bright gray appearance, a metallic luster, and is brittle and hard. Compound semiconductor materials, with superior characteristics such as high frequency, high electron mobility, high output power, low noise and good linearity, are one of the most important supporting materials for optoelectronics and microelectronics industries.
At the application level in the optoelectronics industry, GaAs single crystals can be used to make LDs (lasers), LEDs (light-emitting diodes), optoelectronic integrated circuits (OEICs), and photovoltaic devices.
At the application level in the microelectronics industry, it can be used to make MESFET (Metal Semiconductor Field Effect Transistor), HEMT (High Electron Mobility Transistor), HBT (Heterojunction Bipolar Transistor), IC, microwave diode, Hall device, etc.
It mainly involves high-end military electronic applications, optical fiber communication systems, broadband satellite wireless communication systems, test instruments, automotive electronics, lasers, lighting and other fields. As an important semiconductor material, the electron mobility of GaAs is five times that of silicon and gallium nitride. It is used in small and medium power microwave devices with lower power loss. Therefore, it is used in mobile phone communications, local area wireless networks, GPS and automotive radar. dominant in.