Product Description
SiC epi wafer is a high-quality and advanced semiconductor product in the market. It is a type of silicon carbide epitaxial wafer that provides excellent performance in various electronic and optical applications. The SiC epi wafer is manufactured by utilizing advanced crystal growth techniques, resulting in a high-quality material with superior properties.
One of the significant advantages of SiC epi wafer is its high breakdown voltage, making it an ideal choice for high-power and high-temperature applications. It is also highly resistant to thermal and mechanical stress, which ensures stability and durability even in harsh environments. Its excellent thermal conductivity properties enable efficient heat dissipation, reducing the risk of heat damage to electronic components.
The SiC epi wafer is widely used in various electronic and optoelectronic devices, including power electronics, lighting, and sensors. It provides excellent performance and reliability, even in demanding applications that require high temperature and high power. Moreover, it is an eco-friendly and sustainable alternative to traditional silicon-based materials, making it an ideal choice for environmentally conscious consumers.
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4H N-TYPE SiC 100MM, 350μm WAFER SPECIFICATION |
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Artic le Number |
W4H100N-4-PO (or CO)-350 |
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Description |
4H SiC Substrate |
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Polytype |
4H |
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Diameter |
(100+0.0-0.5) mm |
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Thickness |
(350±25) μm (Engineering grade ±50μm) |
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Carrier Type |
n-type |
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Dopant |
Nitrogen |
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Resistivity (RT) |
0.012-0.025Ω▪cm (Engineering grade <0.025Ω▪cm) |
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Wafer Orientation |
(4+0.5)° |
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Engineering grade |
Production Grade |
Production Grade |
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2.1 |
2.2 |
2.3 |
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Micropipe Density |
≤30cm-² |
≤10cm-² |
≤1cm-² |
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Micropipe Free area |
Not specified |
≥96% |
≥96% |
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Orientation flat (OF) |
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Orientation |
Paralle {1-100} ±5° |
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Orientation flat length |
(32.5±2.0) mm |
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ldentification flat (IF) |
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Orientation |
Si-face: 90° cw, from orientation flat ±5° |
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ldentification flat length |
(18.0+2.0) mm
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Surface |
Option1: Si-face standard polish Epi-ready C-face optical polish |
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Option2: Si-face CMP Epi-ready, C-face optical polish |
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Package |
Multiple wafer (25) shipping box |
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(Single wafer package upon request) |
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6H N-TYPE SiC, 2”WAFER SPECIFICATION |
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Artic le Number |
W6H51N-0-PM-250-S |
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Description |
Production Grade 6H SiC Substrate |
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Polytype |
6H |
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Diameter |
(50.8±38) mm |
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Thickness |
(250±25) um |
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Carrier Type |
n-type |
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Dopant |
Nitrogen |
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Resistivity(RT) |
0.06-0.10Ω▪cm |
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Wafer Orientation |
(0+0.5)° |
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Micropipe Density |
≤100cm-² |
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Orientation flat orientation |
Parallel {1-100} ±5° |
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Orientation flat length |
(15.88±1.65) mm |
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Identification flat orientation |
Si-face: 90° cw. frow orientation flat ±5° |
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ldentification flat length |
(8+1.65) mm |
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Surface |
Si-face standard polish Epi-ready |
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C-face matted |
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Package |
Package single wafer package or multiple wafer shipping box |
Product Picture
Why Choose Us
Our products are sourced exclusively from the world's top five manufacturers and leading domestic factories. Supported by highly skilled domestic and international technical teams and stringent quality control measures.
Our objective is to provide customers with comprehensive one-on-one support, ensuring smooth channels of communication that are professional, timely, and efficient. We offer a low minimum order quantity and guarantee swift delivery within 24 hours.
Factory Show
Our vast inventory consists of 1000+ products, ensuring that customers can place orders for as little as one piece. Our self-owned equipments for dicing & backgrinding, and full cooperation in the global industrial chain enable us prompt shipment to ensure customer one-stop satisfaction and convenience.
Our Certificate
Our company takes pride in the various certifications we have earned, including our patent certificate, ISO9001 certificate, and National High-Tech Enterprise certificate. These certifications represent our dedication to innovation, quality management, and commitment to excellence.
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