Product Description
Our 200mm SiC wafers are an exciting new addition to our product line. Made from high-grade silicon carbide, these wafers offer unparalleled performance and superior quality. Our wafers are designed to meet the demanding requirements of modern fabrication processes and are ideal for use in a wide range of applications.
At 200mm, these wafers are one of the largest available, which means that they offer enhanced scalability and lower costs. They have a high-quality surface finish, which ensures excellent performance and reliability over long periods of time. Additionally, they have excellent thermal conductivity, which means that they can be used in high-temperature environments without losing their performance.
Our 200mm SiC wafers are highly versatile and can be used in a variety of applications. They are ideal for use in semiconductor manufacturing, where their excellent thermal properties and high degree of reliability make them a popular choice. They are also ideal for use in advanced power electronics, as they can operate at high voltages and temperatures without losing their performance.
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4H N-TYPE SiC 100MM, 350μm WAFER SPECIFICATION |
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Artic le Number |
W4H100N-4-PO (or CO)-350 |
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Description |
4H SiC Substrate |
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Polytype |
4H |
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Diameter |
(100+0.0-0.5) mm |
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Thickness |
(350±25) μm (Engineering grade ±50μm) |
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Carrier Type |
n-type |
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Dopant |
Nitrogen |
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Resistivity (RT) |
0.012-0.025Ω▪cm (Engineering grade <0.025Ω▪cm) |
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Wafer Orientation |
(4+0.5)° |
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Engineering grade |
Production Grade |
Production Grade |
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2.1 |
2.2 |
2.3 |
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Micropipe Density |
≤30cm-² |
≤10cm-² |
≤1cm-² |
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Micropipe Free area |
Not specified |
≥96% |
≥96% |
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Orientation flat (OF) |
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Orientation |
Paralle {1-100} ±5° |
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Orientation flat length |
(32.5±2.0) mm |
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ldentification flat (IF) |
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Orientation |
Si-face: 90° cw, from orientation flat ±5° |
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ldentification flat length |
(18.0+2.0) mm |
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Surface |
Option1: Si-face standard polish Epi-ready C-face optical polish |
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Option2: Si-face CMP Epi-ready, C-face optical polish |
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Package |
Multiple wafer (25) shipping box |
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(Single wafer package upon request) |
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6H N-TYPE SiC, 2"WAFER SPECIFICATION |
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Artic le Number |
W6H51N-0-PM-250-S |
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Description |
Production Grade 6H SiC Substrate |
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Polytype |
6H |
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Diameter |
(50.8±38) mm |
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Thickness |
(250±25) um |
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Carrier Type |
n-type |
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Dopant |
Nitrogen |
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Resistivity (RT) |
0.06-0.10Ω▪cm |
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Wafer Orientation |
(0+0.5)° |
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Micropipe Density |
≤100cm-² |
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Orientation flat orientation |
Parallel {1-100} ±5° |
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Orientation flat length |
(15.88±1.65) mm |
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Identification flat orientation |
Si-face: 90° cw. frow orientation flat ±5° |
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ldentification flat length |
(8+1.65) mm |
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Surface |
Si-face standard polish Epi-ready |
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C-face matted |
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Package |
Package single wafer package or multiple wafer shipping box |
Product Picture
Why Choose Us
Our products are sourced exclusively from the world's top five manufacturers and leading domestic factories. Supported by highly skilled domestic and international technical teams and stringent quality control measures.
Our objective is to provide customers with comprehensive one-on-one support, ensuring smooth channels of communication that are professional, timely, and efficient. We offer a low minimum order quantity and guarantee swift delivery within 24 hours.
Factory Show
Our vast inventory consists of 1000+ products, ensuring that customers can place orders for as little as one piece. Our self-owned equipments for dicing & backgrinding, and full cooperation in the global industrial chain enable us prompt shipment to ensure customer one-stop satisfaction and convenience.
Our Certificate
Our company takes pride in the various certifications we have earned, including our patent certificate, ISO9001 certificate, and National High-Tech Enterprise certificate. These certifications represent our dedication to innovation, quality management, and commitment to excellence.
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