Product Description
SiC dummy wafer is a high-quality product that is widely used in the semiconductor industry. It is a silicon carbide wafer that is designed specifically for testing and debugging semiconductor devices. The SiC dummy wafer is an important tool for semiconductor manufacturers, as it helps them to ensure the quality and integrity of their products.
One of the key advantages of the SiC dummy wafer is its high purity and uniformity. This ensures that it provides accurate and reliable results in testing and debugging semiconductor devices. The wafer is also highly durable and resistant to damage, making it an ideal choice for use in harsh operating environments.
Another advantage of the SiC dummy wafer is its versatility. It can be used in a wide range of semiconductor applications, including power devices, RF devices, and optoelectronics. This makes it a valuable tool for semiconductor manufacturers who need to test a variety of devices.
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4H N-TYPE SiC 100MM, 350μm WAFER SPECIFICATION |
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Artic le Number |
W4H100N-4-PO (or CO)-350 |
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Description |
4H SiC Substrate |
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Polytype |
4H |
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Diameter |
(100+0.0-0.5) mm |
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Thickness |
(350±25) μm (Engineering grade ±50μm) |
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Carrier Type |
n-type |
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Dopant |
Nitrogen |
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Resistivity (RT) |
0.012-0.025Ω▪cm (Engineering grade <0.025Ω▪cm) |
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Wafer Orientation |
(4+0.5)° |
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Engineering grade |
Production Grade |
Production Grade |
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2.1 |
2.2 |
2.3 |
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Micropipe Density |
≤30cm-² |
≤10cm-² |
≤1cm-² |
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Micropipe Free area |
Not specified |
≥96% |
≥96% |
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Orientation flat (OF) |
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Orientation |
Paralle {1-100} ±5° |
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Orientation flat length |
(32.5±2.0) mm |
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ldentification flat (IF) |
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Orientation |
Si-face: 90° cw, from orientation flat ±5° |
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ldentification flat length |
(18.0+2.0) mm
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Surface |
Option1: Si-face standard polish Epi-ready C-face optical polish |
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Option2: Si-face CMP Epi-ready, C-face optical polish |
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Package |
Multiple wafer (25) shipping box |
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(Single wafer package upon request) |
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6H N-TYPE SiC, 2"WAFER SPECIFICATION |
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Artic le Number |
W6H51N-0-PM-250-S |
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Description |
Production Grade 6H SiC Substrate |
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Polytype |
6H |
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Diameter |
(50.8±38) mm |
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Thickness |
(250±25) um |
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Carrier Type |
n-type |
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Dopant |
Nitrogen |
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Resistivity(RT) |
0.06-0.10Ω▪cm |
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Wafer Orientation |
(0+0.5)° |
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Micropipe Density |
≤100cm-² |
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Orientation flat orientation |
Parallel {1-100} ±5° |
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Orientation flat length |
(15.88±1.65) mm |
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Identification flat orientation |
Si-face: 90° cw. frow orientation flat ±5° |
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ldentification flat length |
(8+1.65) mm |
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Surface |
Si-face standard polish Epi-ready |
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C-face matted |
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Package |
Package single wafer package or multiple wafer shipping box |
Product Picture
Why Choose Us
Our products are sourced exclusively from the world's top five manufacturers and leading domestic factories. Supported by highly skilled domestic and international technical teams and stringent quality control measures.
Our objective is to provide customers with comprehensive one-on-one support, ensuring smooth channels of communication that are professional, timely, and efficient. We offer a low minimum order quantity and guarantee swift delivery within 24 hours.
Factory Show
Our vast inventory consists of 1000+ products, ensuring that customers can place orders for as little as one piece. Our self-owned equipments for dicing & backgrinding, and full cooperation in the global industrial chain enable us prompt shipment to ensure customer one-stop satisfaction and convenience.
Our Certificate
Our company takes pride in the various certifications we have earned, including our patent certificate, ISO9001 certificate, and National High-Tech Enterprise certificate. These certifications represent our dedication to innovation, quality management, and commitment to excellence.
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