4,6,8inch Silicon Wafer Inventory Update_202506

Jun 20, 2025 Leave a message

LOT	PRODUCT	DIAMETER	CRYSTAL	TYPE	DOPANT	ORIENTATION	THICKNESS	RESISTIVITY
501061S	Al	200	CZ	P	B	100	725±25	1~100	200-300A Ti followed by 8000A PVD Sputtered Al-Cu 0.5%
501201	EPITAXIAL	200	CZ	P	B	100	700~750	<0.1	P/B T1~50/R1~50, MFG 22-MAY-2024
501202	EPITAXIAL	200	CZ	N	Ph RED	100	700~750	0~0.05	N/Ph T1~10/R0.01~1, MFG 27-MAY-2024
522101	POLISHED	200	CZ	P	B	100	710~740	0.01~0.02
522102	POLISHED	200	CZ	P	B	100	710~740	0.009~0.02
522103	POLISHED	200	CZ	P	B	100	710~740	0.015~0.02
522104	POLISHED	200	CZ	P	B	100	705~745	0.014~0.022
522105	POLISHED	200	CZ	P	B	100	710~740	0.014~0.02
522106	POLISHED	200	CZ	P	B	100	725±15	0.001~0.003
522107	POLISHED	200	CZ	P	B	100	710~740	0.0025~0.0035
522108	POLISHED	200	CZ	P	B	100	725±15	0.005~0.01
522109	POLISHED	200	CZ	P	B	100	710~740	0.002~0.0033
522110	POLISHED	200	CZ	P	B	100	725±15	0.0035~0.004
522111	POLISHED	200	CZ	P	B	100	640±13	0.012~0.0175	LTO+NoLM
522112	POLISHED	200	NA	N	As	100	725±15	0.001~0.003
522113	POLISHED	200	CZ	P	B	111	725±15	0.005~0.01
522114	POLISHED	200	CZ	P	B	100	725±50	1~65
522115	POLISHED	200	CZ	P	B	100	725±15	≤40
522116	POLISHED	200	CZ	P	B	100	725±15	0.002~0.003
522117	POLISHED	200	CZ	P	B	100	710~740	0.0033~0.005
522118	POLISHED	200	CZ	P	B	100	725±15	0.003~0.004
522119	POLISHED	200	CZ	P	B	100	725±15	0.001~0.003
522120	POLISHED	200	CZ	P	B	111	725±20	0.002~0.005
522121	POLISHED	200	CZ	P	B	100	725±15	0.003~0.0035
522122	POLISHED	200	CZ	P	B	100	725±15	0.008~0.02
522123	POLISHED	200	CZ	P	B	100	725±15	0.0023~0.004
522124	ETCHED	200	NA	NA	NA	NA	745	NA	LTO+NoLM
522125	POLISHED	200	CZ	P	B	100	705~745	0.01~0.02	LTO+NoLM
SO617PRAU	Sputtered Au	150	CZ	P	B	100	500±15	10~25	Sputtered Ti30nm+Au100nm
PS241025006	SOI	200	CZ	P	B	100	650±5	8~12	Device : 30±0.5μm, 0.01~0.02 ohm.cm / Box : 1±0.1μm, Notch<110>
503141	POLISHED	100	CZ	P	B	110	20000±100	1~100
PS250407006	SOI	200	CZ	N	Ph	100	725±10	1~10	Device : 2±0.5μm / Box : 1000nm±5%
PS250407007	SOI	200	CZ	N	Ph	100	725±10	1~10	Device : 10±0.5μm / Box : 1000nm±5%
PS250407008	SOI	200	CZ	N	Ph	100	725±10	1~10	Device : 3±0.5μm / Box : 1000nm±5%
505061	JGS1	100					555±7		DSP,Sq＜0.5nm, 10/5, TTV<5μm, Flat 32.5mm
505301	OXIDE+Nitride	200	CZ	P	B	100	725±25	1~100	3μm Thermal Oxide+300nm LPCVD Nitride
203171PW3PT	Sputtered Pt	150	CZ	N	Ph	100	675±25	0.001~0.005	3000A Thermal Oxide+Ti50nm+Pt 200nm
506162	POLISHED	200	CZ	N	Ph	100	700~750	1000~12000	N/Ph T1~10/R0.01~1, MFG 27-MAY-2024