Gallium Arsenide Substrate

One of the primary benefits of gallium arsenide substrate is its high electron mobility. It has a larger electron mobility compared to other semiconductor materials like silicon, which makes it ideal for high-speed, low-noise devices. Moreover, it has a direct bandgap that enables it to produce efficient light-emitting diodes that emit in the visible and infrared regions.

Another advantage of this substrate is its high thermal conductivity, which helps in dissipating heat quickly. This feature is especially useful in power electronics applications where heat dissipation is critical. Gallium arsenide substrate also has a high breakdown voltage, which ensures its reliability even under high voltage conditions.

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